Advanced Power Semiconductors Enhance Space Industry with Radiation Resistance
Power semiconductors are critical in electronic systems, managing current flow and enabling power conversion. While silicon (Si) remains the dominant material in electric vehicles and space-based electronics, wide bandgap (WBG) semiconductors like SiC and diamond are emerging as high-performance alternatives. WBG semiconductors, composed of multiple compound elements, offer superior durability and efficiency. SiC power semiconductors, in particular, can tolerate voltages up to ten times higher than silicon-based counterparts, withstand extreme temperatures, and significantly enhance energy efficiency. In electric vehicles, for example, SiC technology can improve power efficiency by up to 10% compared to silicon.
One of the primary challenges for power semiconductors in space is radiation-induced degradation, which can severely impact their electrical properties in spacecraft, satellites, and planetary rovers. While research on radiation effects is well established in the United States and Europe, Korea's efforts have largely concentrated on silicon-based semiconductor resistance, with limited advancements in SiC applications.
KERI has now pioneered a method to rigorously evaluate the radiation resistance of SiC power semiconductors using Korea's first high-energy space simulation technology. The key breakthrough involved replicating extreme space radiation conditions. Space radiation primarily consists of high-energy particles, with protons accounting for 80-90% of total radiation exposure. Dr. Seo's team employed 100 MeV high-energy protons from the Korea Atomic Energy Research Institute's accelerator facility and collaborated with Professor Yoon Young-jun's team at Andong National University to establish precise exposure protocols.
Through these controlled experiments, KERI analyzed the impact of radiation on domestically developed SiC power semiconductors, monitoring factors such as voltage shifts, leakage current increases, and lattice damage. Using this data, the team formulated design guidelines to ensure the long-term operational reliability of SiC devices in space environments. Their findings were recently published in *Radiation Physics and Chemistry*, an SCI-ranked journal in the top 8.7% of the *Nuclear Science and Technology* category.
Dr. Jae Hwa Seo emphasized the global significance of this research, stating, "Setting various radiation effect parameters and testing core components in similarly simulated environments is considered a key space industry technology worldwide." He added, "This technology will be applied across multiple fields, including aerospace, medical radiation equipment, nuclear power plants, radiation waste treatment, and military and defense electronics."
Moving forward, the research team aims to extend their studies by testing SiC semiconductors under ultra-high energy radiation conditions exceeding 200 MeV. Additionally, they are developing advanced radiation-resistant semiconductors and exploring diamond-based power semiconductors, renowned for their superior material properties. This research is being conducted in collaboration with Gyeongnam Province and the Japanese company Orbray, with the goal of strengthening Korea's position in the high-value aerospace industry.
KERI operates as a government-funded research institution under the National Research Council of Science and Technology, Ministry of Science and ICT. This study was part of KERI's fundamental project, *Development of Core Technologies for High-temperature, High-frequency, High-efficiency (3 High) Power Control Modules.*
Research Report:Degeneration mechanism of 30 MeV and 100 MeV proton irradiation effects on 1.2 kV SiC MOSFETs
Related Links
Korea Electrotechnology Research Institute
Space Technology News - Applications and Research
